JPS6361777B2 - - Google Patents
Info
- Publication number
- JPS6361777B2 JPS6361777B2 JP54060131A JP6013179A JPS6361777B2 JP S6361777 B2 JPS6361777 B2 JP S6361777B2 JP 54060131 A JP54060131 A JP 54060131A JP 6013179 A JP6013179 A JP 6013179A JP S6361777 B2 JPS6361777 B2 JP S6361777B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- epitaxial layer
- silicon substrate
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 238000002955 isolation Methods 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 31
- 238000009792 diffusion process Methods 0.000 description 19
- 239000012535 impurity Substances 0.000 description 16
- 238000005468 ion implantation Methods 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 11
- 229910052796 boron Inorganic materials 0.000 description 8
- 238000009413 insulation Methods 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- -1 aluminum ions Chemical class 0.000 description 6
- 238000002513 implantation Methods 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
- H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/918—Light emitting regenerative switching device, e.g. light emitting scr arrays, circuitry
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Element Separation (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6013179A JPS55151349A (en) | 1979-05-15 | 1979-05-15 | Forming method of insulation isolating region |
| US06/147,715 US4295898A (en) | 1979-05-15 | 1980-05-08 | Method of making isolated semiconductor devices utilizing ion-implantation of aluminum and heat treating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6013179A JPS55151349A (en) | 1979-05-15 | 1979-05-15 | Forming method of insulation isolating region |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55151349A JPS55151349A (en) | 1980-11-25 |
| JPS6361777B2 true JPS6361777B2 (en]) | 1988-11-30 |
Family
ID=13133266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6013179A Granted JPS55151349A (en) | 1979-05-15 | 1979-05-15 | Forming method of insulation isolating region |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4295898A (en]) |
| JP (1) | JPS55151349A (en]) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4512816A (en) * | 1982-02-26 | 1985-04-23 | National Semiconductor Corporation | High-density IC isolation technique capacitors |
| JPS5935425A (ja) * | 1982-08-23 | 1984-02-27 | Toshiba Corp | 半導体装置の製造方法 |
| JPS5955052A (ja) * | 1982-09-24 | 1984-03-29 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| US4662061A (en) * | 1985-02-27 | 1987-05-05 | Texas Instruments Incorporated | Method for fabricating a CMOS well structure |
| JPS61256675A (ja) * | 1985-05-09 | 1986-11-14 | Sumitomo Electric Ind Ltd | シヨツトキゲ−ト電界効果トランジスタの製造方法 |
| US4746964A (en) * | 1986-08-28 | 1988-05-24 | Fairchild Semiconductor Corporation | Modification of properties of p-type dopants with other p-type dopants |
| DE3782608D1 (de) * | 1986-09-30 | 1992-12-17 | Siemens Ag | Verfahren zum erzeugen eines p-dotierten halbleitergebiets in einem n-leitenden halbleiterkoerper. |
| US4734382A (en) * | 1987-02-20 | 1988-03-29 | Fairchild Semiconductor Corporation | BiCMOS process having narrow bipolar emitter and implanted aluminum isolation |
| KR890005885A (ko) * | 1987-09-26 | 1989-05-17 | 강진구 | 바이폴라 트랜지스터의 제조방법 |
| US4939099A (en) * | 1988-06-21 | 1990-07-03 | Texas Instruments Incorporated | Process for fabricating isolated vertical bipolar and JFET transistors |
| US5141881A (en) * | 1989-04-20 | 1992-08-25 | Sanyo Electric Co., Ltd. | Method for manufacturing a semiconductor integrated circuit |
| JP2527628B2 (ja) * | 1989-11-16 | 1996-08-28 | 三洋電機株式会社 | 半導体装置の製造方法 |
| US6884701B2 (en) * | 1991-04-27 | 2005-04-26 | Hidemi Takasu | Process for fabricating semiconductor device |
| JP3086836B2 (ja) * | 1991-04-27 | 2000-09-11 | ローム株式会社 | 半導体装置の製造方法 |
| US5192712A (en) * | 1992-04-15 | 1993-03-09 | National Semiconductor Corporation | Control and moderation of aluminum in silicon using germanium and germanium with boron |
| JPH06196723A (ja) * | 1992-04-28 | 1994-07-15 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| US5408122A (en) * | 1993-12-01 | 1995-04-18 | Eastman Kodak Company | Vertical structure to minimize settling times for solid state light detectors |
| US5559313A (en) * | 1994-12-23 | 1996-09-24 | Lucent Technologies Inc. | Categorization of purchased items for each transaction by a smart card |
| US5702957A (en) * | 1996-09-20 | 1997-12-30 | Lsi Logic Corporation | Method of making buried metallization structure |
| US7494933B2 (en) * | 2006-06-16 | 2009-02-24 | Synopsys, Inc. | Method for achieving uniform etch depth using ion implantation and a timed etch |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3930909A (en) * | 1966-10-21 | 1976-01-06 | U.S. Philips Corporation | Method of manufacturing a semiconductor device utilizing simultaneous outdiffusion during epitaxial growth |
| US3752715A (en) * | 1971-11-15 | 1973-08-14 | Ibm | Production of high speed complementary transistors |
| JPS4879585A (en]) * | 1972-01-24 | 1973-10-25 | ||
| US3992232A (en) * | 1973-08-06 | 1976-11-16 | Hitachi, Ltd. | Method of manufacturing semiconductor device having oxide isolation structure and guard ring |
| US4128439A (en) * | 1977-08-01 | 1978-12-05 | International Business Machines Corporation | Method for forming self-aligned field effect device by ion implantation and outdiffusion |
-
1979
- 1979-05-15 JP JP6013179A patent/JPS55151349A/ja active Granted
-
1980
- 1980-05-08 US US06/147,715 patent/US4295898A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55151349A (en) | 1980-11-25 |
| US4295898A (en) | 1981-10-20 |
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